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NTGS4141N Power MOSFET
30 V, 7.0 A, Single N-Channel, TSOP-6
Features
* Low RDS(on) * Low Gate Charge * Pb-Free Package is Available
Applications
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V(BR)DSS RDS(on) TYP 21.5 mW @ 10 V 30 V 30 mW @ 4.5 V 7.0 A ID MAX
* Load Switch * Notebook PC * Desktop PC
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t 10 s Power Dissipation (Note 1) Steady State t 10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25C TA = 85C TA = 25C tp = 10 ms PD IDM TJ, TSTG IS EAS ID TA = 25C TA = 85C TA = 25C TA = 25C PD Symbol VDSS VGS ID Value 30 20 5.0 3.6 7.0 1.0 2.0 3.5 2.5 0.5 21 -55 to 150 2.0 54 W A C A mJ A W Unit V V A
N-Channel
Drain 1 2 5 6
Gate 3
Source 4
MARKING DIAGRAM
TSOP-6 CASE 318G STYLE 1
1
S4 MG G
Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 30 V, IL = 10.4 A, VGS = 10 V, L = 1.0 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8 from case for 10 s)
S4 = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain Drain Source 654
TL
260
C
THERMAL RESISTANCE RATINGS
Rating Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t 10 s (Note 1) Junction-to-Ambient - Steady State (Note 2) Symbol RJA RJA RJA Max 125 62.5 248 Unit C/W 1 23 Drain Drain Gate
ORDERING INFORMATION
Device NTGS4141NT1 NTGS4141NT1G Package TSOP-6 TSOP-6 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel
1. Surface-mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0773 in sq).
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2006
1
February, 2006 - Rev. 1
Publication Order Number: NTGS4141N/D
NTGS4141N
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, VDS = 24 V TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 30 18.4 1.0 10 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH) VGS(TH)/TJ RDS(on)
VGS = VDS, ID = 250 mA
1.0 5.7
3.0
V mV/C
VGS = 10 V, ID = 7.0 A VGS = 4.5 V, ID = 6.0 A
21.5 30 30
25 35
mW
Forward Transconductance
gFS
VDS = 10 V, ID = 7.0 A
S
CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN - SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 2.0 A TJ = 25C TJ = 125C 0.78 0.63 15 VGS = 0 V dIS/dt = 100 A/ms, IS = 2.0 A 9.0 6.0 8.0 nC ns 1.0 V td(ON) tr td(OFF) tf VGS = 10 V, VDS = 24 V, ID = 7.0 A, RG = 3.0 W 6.0 15 18 4.0 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) QG(TH) QGS QGD RG VGS = 4.5 V, VDS = 15 V, ID = 7.0 A VGS = 10 V, VDS = 15 V, ID = 7.0 A VGS = 0 V, f = 1.0 MHz, VDS = 24 V 560 115 75 12 0.85 1.9 3.0 6.0 0.8 1.85 3.0 2.8 W nC nC pF
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge
tRR ta tb QRR
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures.
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NTGS4141N
TYPICAL PERFORMANCE CURVES
15 ID, DRAIN CURRENT (AMPS) 10 V 6V 4.5 V 10 TJ = 25C ID, DRAIN CURRENT (AMPS) 3.5 V 15 VDS 10 V
10
5
3V
5 125C 25C 0 TJ = -55C 1 2 3 4 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5
2.6 V 0 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.05 TJ = 25C ID = 7 A 0.04 0.05
Figure 2. Transfer Characteristics
TJ = 25C 0.04
0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 0 0 5 10 15 ID, DRAIN CURRENT (AMPS)
0.03
0.02
0.01 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
2.0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = 7 A VGS = 10 V 1.5 10000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V IDSS, LEAKAGE CURRENT (nA)
1000 TJ = 150C
1.0
100
TJ = 125C
0.5
0 -50
10 -25 0 25 50 75 100 125 150 0 TJ, JUNCTION TEMPERATURE (C) 5 10 15 20 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 30
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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NTGS4141N
TYPICAL PERFORMANCE CURVES
VDS = 0 V C, CAPACITANCE (pF) 1000 800 600 400 Crss 200 0 10 Crss 5 VGS 0 VDS 5 10 15 20 25 Coss Ciss Ciss VGS = 0 V TJ = 25C VGS GATE-TO-SOURCE VOLTAGE (V) , 1200 10 QT 8 VGS
6
4
QGS
QGD ID = 7 A VDD = 15 V TJ = 25C
2 0 0 2
4 6 8 10 QG, TOTAL GATE CHARGE (nC)
12
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000 IS, SOURCE CURRENT (AMPS) VDD = 24 V ID = 7 A VGS = 10 V t, TIME (ns) 100 tf tr 10 7 6 5 4 3 2 1 0 1 10 RG, GATE RESISTANCE (OHMS) 100 0
Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge
VGS = 0 V TJ = 25C
td(off)
td(on)
1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
0.9
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 60
Figure 10. Diode Forward Voltage vs. Current
ID = 10.4 A
40
20
0 25
50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (C)
150
Figure 11. Maximum Avalanche Energy vs. Starting Junction Temperature
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NTGS4141N
PACKAGE DIMENSIONS
TSOP-6 CASE 318G-02 ISSUE P
D
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10 - STYLE 1: PIN 1. 2. 3. 4. 5. 6. INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 -
6
5 1 2
4 3
HE
E
b e q 0.05 (0.002) A1 A L c
DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0
MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0 DRAIN DRAIN GATE SOURCE DRAIN DRAIN
MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10
SOLDERING FOOTPRINT*
2.4 0.094
1.9 0.075
0.95 0.037 0.95 0.037
0.7 0.028 1.0 0.039
SCALE 10:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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NTGS4141N/D

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